casa / produtos / Circuitos Integrados (ICs) / Memória / MB85RS256BPNF-G-JNE1
Número da peça de fabricante | MB85RS256BPNF-G-JNE1 |
---|---|
Número da peça futura | FT-MB85RS256BPNF-G-JNE1 |
SPQ / MOQ | Contate-Nos |
Material de empacotamento | Reel/Tray/Tube/Others |
Series | - |
MB85RS256BPNF-G-JNE1 Status (Ciclo de Vida) | Em estoque |
Status da Peça | Discontinued at Future Semiconductor |
Tipo de memória | Non-Volatile |
Formato de memória | FRAM |
Tecnologia | FRAM (Ferroelectric RAM) |
Tamanho da memória | 256Kb (32K x 8) |
Freqüência do relógio | 33MHz |
Escrever tempo de ciclo - Word, página | - |
Tempo de acesso | - |
Interface de memória | SPI |
Tensão - fonte | 2.7V ~ 3.6V |
Temperatura de operação | -40°C ~ 85°C (TA) |
Tipo de montagem | Surface Mount |
Pacote / caso | 8-SOIC (0.154", 3.90mm Width) |
Pacote de Dispositivo do Fornecedor | 8-SOP |
País de origem | USA/JAPAN/MALAYSIA/MEXICO/CN |
MB85RS256BPNF-G-JNE1 Peso | Contate-Nos |
Número da peça de substituição | MB85RS256BPNF-G-JNE1-FT |
GD5F1GQ4UEYIGY
GigaDevice Semiconductor (HK) Limited
GD5F1GQ4UFYIGR
GigaDevice Semiconductor (HK) Limited
GD5F1GQ4UFYIGY
GigaDevice Semiconductor (HK) Limited
GD5F2GQ4UEYIGR
GigaDevice Semiconductor (HK) Limited
GD5F2GQ4UEYIGY
GigaDevice Semiconductor (HK) Limited
GD5F2GQ4UFYIGY
GigaDevice Semiconductor (HK) Limited
GD5F4GQ4RBYIGR
GigaDevice Semiconductor (HK) Limited
GD5F4GQ4RBYIGY
GigaDevice Semiconductor (HK) Limited
GD5F4GQ4RCYIGR
GigaDevice Semiconductor (HK) Limited
GD5F4GQ4RCYIGY
GigaDevice Semiconductor (HK) Limited
A54SX32A-TQG144
Microsemi Corporation
LCMXO1200C-4T100I
Lattice Semiconductor Corporation
LCMXO2280C-4T100C
Lattice Semiconductor Corporation
5SGSED8K3F40I4N
Intel
10CX150YF672E6G
Intel
5SGXEA9N3F45I4N
Intel
LFEC33E-5F672C
Lattice Semiconductor Corporation
LCMXO2-7000HE-5BG332C
Lattice Semiconductor Corporation
10AX115H3F34E2SG
Intel
EP3SE50F780C4
Intel